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Abstract The Nernst effect, the generation of a tranverse electric voltage in the presence of longitudinal thermal gradient, has garnered significant attention in the realm of magnetic topological materials due to its superior potential for thermoelectric applications. In this work, the electronic and thermoelectric transport properties of a Kagome magnet ErMn₆Sn₆are investigated, a compound showing an incommensurate antiferromagnetic phase followed by a ferrimagnetic phase transition upon cooling. It is shown that in the antiferromagnetic phase ErMn₆Sn₆exhibits both topological Nernst effect and anomalous Nernst effect, analogous to the electric Hall effects, with the Nernst coefficient reaching 1.71 µV K⁻¹ at 300 K and 3 T. This value surpasses that of most of previously reported state‐of‐the‐art canted antiferromagnetic materials and is comparable to recently reported other members of RMn₆Sn₆(R = rare‐earth, Y, Lu, Sc) compounds, which makes ErMn₆Sn₆a promising candidate for advancing the development of Nernst effect‐based thermoelectric devices. 

Multiferroic materials host both ferroelectricity and magnetism, offering potential for magnetic memory and spin transistor applications. Here, we report a multiferroic chalcogenide semiconductor Cu_1−xMn_1+ySiTe₃(0.04 ≤x≤ 0.26; 0.03 ≤y≤ 0.15), which crystallizes in a polar monoclinic structure (Pmspace group). It exhibits a canted antiferromagnetic state below 35 kelvin, with magnetic hysteresis and remanent magnetization under 15 kelvin. We demonstrate multiferroicity and strong magnetoelectric coupling through magnetodielectric and magnetocurrent measurements. At 10 kelvin, the magnetically induced electric polarization reaches ~0.8 microcoulombs per square centimeter, comparable to the highest value in oxide multiferroics. We also observe possible room-temperature ferroelectricity. Given that multiferroicity is very rare among transition metal chalcogenides, our finding sets up a unique materials platform for designing multiferroic chalcogenides. 

Abstract Searching for Kagome magnets with novel magnetic and electronic properties has been attracting significant efforts recently. Here, the magnetic, electronic, and thermoelectric properties of Fe₃Ge single crystals with Fe atoms forming a slightly distorted Kagome lattice are reported. It is shown that Fe₃Ge exhibits a large anomalous Hall effect and anomalous Nernst effect. The observed anomalous transverse thermoelectric conductivity reaches ≈4.6 A m⁻¹ K⁻¹, which is larger than the conventional ferromagnets and most of the topological ferromagnets reported in literature. The first‐principles calculations suggest that these exceptional transport properties are dominated by the intrinsic mechanism, which highlights the significant contribution of the Berry curvature of massive Dirac gaps in the momentum space. Additionally, a topological Hall resistivity of 0.9 µΩ cm and a topological Nernst coefficient of 1.2 µV K⁻¹are also observed, which are presumably ascribed to the Berry phase associated with the field‐induced non‐zero scalar spin chirality. These features highlight the synergic effects of the Berry phases in both momentum space and real space of Fe₃Ge, which render it an excellent candidate for room‐temperature thermoelectric applications based on transverse transport. 

Abstract Topological kagome magnets RMn₆Sn₆(R = rare earth element) attract numerous interests due to their non-trivial band topology and room-temperature magnetism. Here, we report a high entropy version of kagome magnet, (Gd_0.38Tb_0.27Dy_0.20Ho_0.15)Mn₆Sn₆. Such a high entropy material exhibits multiple spin reorientation transitions, which is not seen in all the related parent compounds and can be understood in terms of competing magnetic interactions enabled by high entropy. Furthermore, we also observed an intrinsic anomalous Hall effect, indicating that the high entropy phase preserves the non-trivial band topology. These results suggest that high entropy may provide a route to engineer the magnetic structure and expand the horizon of topological materials.